BDY93 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switch at high voltage. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY93 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
