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BFG540 Datasheet Preview

BFG540 Datasheet

Silicon NPN RF Transistor

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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
BFG540
DESCRIPTION
·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz
·High Gain
S212 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
VALUE
20
12
2.5
120
0.5
150
-65~150
UNIT
V
V
V
mA
W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BFG540 Datasheet Preview

BFG540 Datasheet

Silicon NPN RF Transistor

No Preview Available !

isc Silicon NPN RF Transistor
INCHANGE Semiconductor
BFG540
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
12
V
ICBO Collector Cutoff Current
VCB= 8V; IE= 0
0.05 μA
hFE DC Current Gain
IC=40mA ; VCE= 8V
60 250
fT
Current-Gain—Bandwidth Product
IC= 40mA ; VCE= 8V; f= 1MHz
9 GHz
Cre Feedback Capacitance
IE= 0 ; VCB= 8V; f= 1MHz
0.5 pF
Ce Emitter capacitance
IC=iC=0,VEB=0.5V,f=1MHz
2.0 pF
CC Collector capacitance
IE=ie=0,VCB=8V,f=1MHz
0.9 pF
S212 Insertion Power Gain
IC= 40mA ; VCE= 8V; f= 900MHz
15
16
dB
NF Noise Figure
IC= 10mA ; VCE= 8V; f= 900MHz
IC= 40mA ; VCE= 8V; f= 900MHz
1.3 1.8
1.9 2.4 dB
IC= 10mA ; VCE= 8V; f= 2GHz
2.1
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BFG540
Description Silicon NPN RF Transistor
Maker INCHANGE
Total Page 3 Pages
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