isc Silicon NPN RF Transistor
INCHANGE Semiconductor
BFG540
DESCRIPTION
·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz
·High Gain
︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
VALUE
20
12
2.5
120
0.5
150
-65~150
UNIT
V
V
V
mA
W
℃
℃
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