Datasheet4U Logo Datasheet4U.com

BFG540 - SOT-143 Silicon NPN RF Transistor

Description

NF = 1.3 dB TYP.

︱S21︱2 =16dB TYP.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers a

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BFG540 VALUE 20 15 2.5 120 0.5 150 -65~150 UNIT V V V mA W ℃ ℃ isc website:www.iscsemi.
Published: |