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BU110 - NPN Transistor

Description

Excellent Safe Operating Area Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150 V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hor

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
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