Datasheet Details
| Part number | BU114 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.57 KB |
| Description | NPN Transistor |
| Datasheet | BU114-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU114 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.57 KB |
| Description | NPN Transistor |
| Datasheet | BU114-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 150 V 6 V 6 A ICM Collector Current-Peak 10 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ BU114 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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