Datasheet Details
| Part number | BU110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.56 KB |
| Description | NPN Transistor |
| Datasheet | BU110-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.56 KB |
| Description | NPN Transistor |
| Datasheet | BU110-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO VEBO IC ICM Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak 150 V 6 V 10 A 15 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W BU110 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
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