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BU111 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 300V(Min) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in color TV receivers chopper supplies.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 300V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Repetitive 8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU111 isc website：www.iscsemi.