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BU124 Datasheet Preview

BU124 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 150V(Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switch-mode CTV supply systems applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2
A
50
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.1 /W
BU124
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU124 Datasheet Preview

BU124 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BU124
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB= 0
150
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
2.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.5
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A; IB= 0.8A
2.5
V
ICBO
Collector Base Cutoff Current
VCB=350V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC=0
0.1 mA
hFE-1
DC Current Gain
IC= 5A ; VCE= 5V
20
hFE-2
DC Current Gain
IC= 10A ; VCE= 5V
5
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V;ftest= 1.0MHz
4
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU124
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BU124 Datasheet PDF





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