Datasheet Details
| Part number | BU124 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.22 KB |
| Description | NPN Transistor |
| Datasheet |
 BU124 Datasheet
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| Part number | BU124 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.22 KB |
| Description | NPN Transistor |
| Datasheet |
BU124 Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switch-mode CTV supply systems applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.1 ℃/W BU124 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU124 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB= 0 150 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor.
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