900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BU2525DF Datasheet Preview

BU2525DF Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage
·High Speed Switching
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Base Voltage VBE= 0
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
8
A
IBM
Base Current-peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
12
A
45
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 2.8 /W
BU2525DF
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU2525DF Datasheet Preview

BU2525DF Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 1.6A
VCE= VCES; VBE= 0
VCE= VCES; VBE= 0;TC=125
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 8A
BU2525DF
MIN TYP. MAX UNIT
800
V
7.5
V
5.0
V
1.1
V
1.0
2.0
mA
72
218
11
5
9.5
2.0
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU2525DF
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

BU2525DF Datasheet PDF





Similar Datasheet

1 BU2525DF Silicon Diffused Power Transistor
NXP
2 BU2525DF SILICON POWER TRANSISTOR
SavantIC
3 BU2525DF NPN Transistor
INCHANGE
4 BU2525DW Silicon Diffused Power Transistor
NXP
5 BU2525DW Silicon NPN Power Transistor
INCHANGE
6 BU2525DX Silicon Diffused Power Transistor
NXP
7 BU2525DX SILICON POWER TRANSISTOR
SavantIC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy