High Voltage
High Speed Switching
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Base Voltage VBE= 0
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.
BU2525DF Datasheet
