Datasheet4U Logo Datasheet4U.com

BU326 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 375V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in operating in color TV rec

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU326 SILICON POWER TRANSISTOR SavantIC
BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR ST Microelectronics
BU326A Silicon NPN Transistor Toshiba
BU326A SILICON POWER TRANSISTOR SavantIC
BU326S Bipolar NPN Device Semelab

Other Datasheets by Inchange Semiconductor

Part Number Description
BU326A NPN Transistor
BU326S NPN Transistor
BU323A NPN Transistor
BU323AP NPN Transistor
BU323P NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor BU326 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 375V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in operating in color TV receivers chopper supplies.