isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BU941ZPFI
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
350
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA
1.8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA
1.8
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12 A; IB= 300mA
2.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
2.2
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10 A; IB= 250mA
2.5
V
VBE(sat)-3 Base-Emitter Saturation Voltage
IC= 12 A; IB= 300mA
2.7
V
ICBO
Collector Cutoff Current
VCB= RatedVCBO; IE= 0
0.25 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
20
mA
hFE
DC Current Gain
IC= 5A; VCE= 10V
300
VECF
C-E Diode Forward Voltage
IF= 10A
2.5
V
Switching Times
ts
Storage Time
tf
Fall Time
VCC= 12V; IC= 7A,
IB1= -IB2= 70mA
15
μs
0.5
μs
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
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incidental damages.
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