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BU941ZPFI Datasheet Preview

BU941ZPFI Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.)
·High Reliability
·Low Collector Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current
1
A
IBM
Base Current-peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
5
A
65
W
175
Tstg
Storage Temperature Range
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.3 /W
BU941ZPFI
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU941ZPFI Datasheet Preview

BU941ZPFI Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BU941ZPFI
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
350
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA
1.8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA
1.8
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12 A; IB= 300mA
2.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
2.2
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10 A; IB= 250mA
2.5
V
VBE(sat)-3 Base-Emitter Saturation Voltage
IC= 12 A; IB= 300mA
2.7
V
ICBO
Collector Cutoff Current
VCB= RatedVCBO; IE= 0
0.25 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
20
mA
hFE
DC Current Gain
IC= 5A; VCE= 10V
300
VECF
C-E Diode Forward Voltage
IF= 10A
2.5
V
Switching Times
ts
Storage Time
tf
Fall Time
VCC= 12V; IC= 7A,
IB1= -IB2= 70mA
15
μs
0.5
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU941ZPFI
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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