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BUF420M - NPN Transistor

General Description

With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Peak Collector Current 60 A IB Base Current 6 A PC Collector Power Dissipation 200 W TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c The