Datasheet Details
| Part number | BUL52A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.52 KB |
| Description | NPN Transistor |
| Datasheet | BUL52A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUL52A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.52 KB |
| Description | NPN Transistor |
| Datasheet | BUL52A-INCHANGE.pdf |
|
|
|
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.1V(Max) @ IC= 0.1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-peak 10 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 2.5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BUL52A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUL52AFI | NPN Transistor | Seme LAB |
|
BUL52 | NPN Transistor | Seme LAB |
|
BUL52B | NPN Transistor | Seme LAB |
 |
BUL52B | SILICON POWER TRANSISTOR | SavantIC |
|
BUL52BFI | NPN Transistor | Seme LAB |
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