Datasheet Details
| Part number | BUP49 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.84 KB |
| Description | NPN Power Transistor |
| Download | BUP49 Download (PDF) |
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| Part number | BUP49 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 225.84 KB |
| Description | NPN Power Transistor |
| Download | BUP49 Download (PDF) |
|
|
|
·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 80 V 8 V IC Collector Current-Continuous PC Collector Power Dissipation 90 A 300 W TJ Junction Temperature -55~200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.58 ℃/W BUP49 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUP49 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BUP41 | Silicon NPN Power Transistor |
| BUP22 | NPN Transistor |
| BUP30 | NPN Transistor |
| BUP51 | NPN Transistor |
| BUP52 | NPN Transistor |