900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BUP49 Datasheet Preview

BUP49 Datasheet

NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·Large collector current
·Low collector saturation voltage
·High power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in DC-DC converter
·Driver of solenoid or motor
·For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
80
V
8
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
90
A
300
W
TJ
Junction Temperature
-55~200
Tstg
Storage Temperature
-55~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.58 /W
BUP49
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUP49 Datasheet Preview

BUP49 Datasheet

NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 35A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 35A; IB= 2A
ICEO
Collector Cutoff Current
VCE= 80V; IB=0
ICBO
Collector Cutoff Current
VCB= 150V; IE=0
hFE-1
DC Current Gain
IC= 80A; VCE= 4V
BUP49
MIN MAX UNIT
80
V
150
V
8
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BUP49
Description NPN Power Transistor
Maker INCHANGE
PDF Download

BUP49 Datasheet PDF






Similar Datasheet

1 BUP400 IGBT
Siemens Semiconductor Group
2 BUP400D IGBT
Siemens Semiconductor Group
3 BUP401 IGBT
Siemens Semiconductor Group
4 BUP402 IGBT
Siemens Semiconductor Group
5 BUP403 IGBT
Siemens Semiconductor Group
6 BUP41 Silicon Epitaxial Planar NPN Transistor
TT electronics
7 BUP41 Silicon NPN Power Transistor
INCHANGE
8 BUP410 IGBT
Siemens Semiconductor Group
9 BUP410D IGBT
Siemens Semiconductor Group





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy