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BUX66 - PNP Transistor

General Description

Contunuous Collector Current-IC= -2A Power Dissipation-PD= 35W @TC= 25℃ Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching a

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isc Silicon PNP Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX66 -200 VCBO Collector-Base Voltage V BUX66A -300 BUX66 -150 VCEO Collector-Emitter Voltage V BUX66A -250 VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2.0 A ICP Collector Current-Peak -5.