The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc N-Channel Mosfet Transistor
BUZ40B
·FEATURES ·SOA is Power Dissipation Limited
• Nanosecond Switching Speeds • Linear Transfer Characteristics ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed for applications such as switching regulators,
switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=35℃
8.
BUZ40B Datasheet
