DMG3N60SJ3
Description
.
Key Features
- Drain Current –ID= 2.8A@ TC=25℃
- Drain Source Voltage
- Static Drain-Source On-Resistance
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
- Part: DMG3N60SJ3
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 269.11 KB