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FMV11N60E - N-Channel MOSFET

Features

  • With TO-220F packaging.
  • Maintains both low power loss andlow noise.
  • Very high commutation ruggedness.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMV11N60E ·FEATURES ·With TO-220F packaging ·Maintains both low power loss andlow noise ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 44 PD Total Dissipation 65 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resista
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