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FQD7P20 - P-Channel MOSFET

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General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous -200 V ±30 V ID Drain Current-Continuous -5.7 A IDM Drain Current-Single Pluse -22.8 A PD Total Dissipation @TC=25℃ 55 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W FQD7P20 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Overview

isc P-Channel MOSFET Transistor.

Key Features

  • Drain Current.
  • ID= -5.7A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.69Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FQD7P20 200V P-Channel MOSFET Fairchild Semiconductor
ON Semiconductor Logo FQD7P20 P-Channel MOSFET ON Semiconductor

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