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FQD7P20 - P-Channel MOSFET

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General Description

purpose applications.

Overview

isc P-Channel MOSFET Transistor.

Key Features

  • Drain Current.
  • ID= -5.7A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.69Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FQD7P20 200V P-Channel MOSFET Fairchild Semiconductor
ON Semiconductor Logo FQD7P20 P-Channel MOSFET ON Semiconductor

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