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IPB048N15N5LF - N-Channel MOSFET

General Description

Drain Current ID= 120A@ TC=25℃ Drain Source Voltage : VDSS= 150V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed switching applications ABSOLUTE MAXIMUM RATI

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 120 A ID(puls) Pulse Drain Current 480 A Ptot Total Dissipation@TC=25℃ 313 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.