The IPB048N15N5LF is a N-Channel MOSFET.
| Height | 4.82 mm |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPB048N15N5LF Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designe. ) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 150 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3.3 4.9 V VSD Diode Forward On-Voltage IF=100A ;VGS= 0 1.2 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=100A 4.8 m. |
| Part Number | IPB048N15N5LF Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Infineon |
| Overview |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*Idealforhot-swapande-fuseapplications *Verylowon-resistanceRDS(on) *WidesafeoperatingareaSOA *N-channel,normallevel *100%avalanchetested *Pb-freeplating;RoHScompliant *QualifiedaccordingtoJEDEC1)fortargetapplications *Halogen-freeaccordingtoIEC61249-2-21 Table. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 302 | 1+ : 8.18 USD 10+ : 5.94 USD 25+ : 5.54 USD 50+ : 5.13 USD |
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| Future Electronics | 1000 | 1000+ : 7.53 USD | View Offer |
| Future Electronics | 0 | 1000+ : 7.53 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| IPB048N15N5 | Infineon | MOSFET |
| IPB048N15N5 | Inchange Semiconductor | N-Channel MOSFET |