Key Features
- Static drain-source on-resistance: RDS(on) ≤4.9mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- reliable device for use in a wide variety of applications
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRF1407SPbF
|
Infineon |
Power MOSFET |
|
IRF140
|
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
IRF140SMD
|
Seme LAB |
N-CHANNEL POWER MOSFET |
|
IRF1407SPbF
|
International Rectifier |
Power MOSFETs |
|
IRF1407S
|
Infineon |
Power MOSFET |
|
IRF1404Z
|
Kexin Semiconductor |
N-Channel MOSFET |
