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IRF3205STRLPBF - N-Channel MOSFET

Description

Drain Current ID=110A@ TC=25℃ Drain Source Voltage : VDSS= 55V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Designed for high current, high speed switching, switch mode power supplies.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205STRLPBF ·DESCRIPTION ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 110 A IDM Pulse Drain Current 390 A Ptot Total Dissipation@TC=25℃ 200 W Tj Max.
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