IRF630N - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IRF630N
Manufacturer	INCHANGE
File Size	241.39 KB
Description	N-Channel MOSFET
Datasheet	IRF630N-INCHANGE.pdf

IRF630N Product details

Description

Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.3 IDM Drain Current-Single Pulsed 37 PD Total Dissipation @TC=25℃ 82 Tj Max.Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal

Features

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Static drain-source on-resistance: RDS(on) ≤0.3Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 11, 2020 |