IRF630N datasheet, mosfet equivalent, INCHANGE

datasheet Download (Size : 241.39KB)

Features and benefits

*Static drain-source on-resistance: RDS(on) ≤0.3Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for ro.

Application

*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Volt.

Description

* Efficient and reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.3 IDM Dr.

Image gallery