Download IRFB3306 Datasheet PDF
IRFB3306 page 2
Page 2

Datasheet Summary

isc N-Channel MOSFET Transistor IRFB3306,IIRFB3306 - Features - Static drain-source on-resistance: RDS(on) ≤4.2mΩ - Enhancement mode - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRIPTION - High efficiency synchronous rectification in SMPS - Uninterrruptible power supply - High speed power switching -...