Datasheet Details
| Part number | IRFB3306 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.01 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFB3306-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor IRFB3306，IIRFB3306 ·.
| Part number | IRFB3306 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.01 KB |
| Description | N-Channel MOSFET |
| Datasheet | IRFB3306-INCHANGE.pdf |
|
|
|
·High efficiency synchronous rectification in SMPS ·Uninterrruptible power supply ·High speed power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 620 PD Total Dissipation @TC=25℃ 230 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.65 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFB3306，IIRFB3306 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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|
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