Key Features
- Static drain-source on-resistance: RDS(on) ≤6.3mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- reliable device for use in a wide variety of applications
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRFB3307PbF
|
International Rectifier |
HEXFET Power MOSFET |
|
IRFB3307
|
International Rectifier |
HEXFET Power MOSFET |
|
IRFB3306PBF
|
International Rectifier |
Power MOSFET |
|
IRFB3306GPbF
|
International Rectifier |
Power MOSFET |