IRFP2907
Overview
- Static drain-source on-resistance: RDS(on)≤4.5mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Ultra Low On-resistance
- Fast Switching
| Part | IRFP2907 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 237.47 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRFP2907B | International Rectifier | HEXFET Power MOSFET |
| IRFP2907Z | International Rectifier | AUTOMOTIVE MOSFET |
| IRFP2907PBF | International Rectifier | Power MOSFET |
| IRFP2907 | International Rectifier | Power MOSFET |
| IRFP2907ZPBF | International Rectifier | Power MOSFET |