IXFH30N60X - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤ 15 5mΩ@VGS=10V.
Fully characterized avalanche voltage and current.
100% Avalanche Tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXFH30N60X
Manufacturer	INCHANGE
File Size	334.61 KB
Description	N-Channel MOSFET
Datasheet	IXFH30N60X Datasheet
Additional preview pages of the IXFH30N60X datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15 5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation @TC=25℃ 500 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 0.

Published: Nov 2, 2020 |