IXTH30N50L
FEATURES
- With TO-247 packaging
- With low gate drive requirements
- Low switching loss
- Low on-state resistance
- Easy to drive
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
±20
Drain Current-Continuous@Tc=25℃
Drain Current-Single Pulsed@Tc=25℃
Total Dissipation
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.31
UNIT ℃/W isc website：.iscsemi.cn...
