IXTQ200N06P Overview
Key Features
- Drain Source Voltage- : VDSS= 60V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max)
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTQ200N06P |
|---|---|
| Description | N-ChannelMOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 267.94 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IXTQ200N06P | IXYS | Power MOSFET |
| IXTQ200N085T | IXYS | Power MOSFET |
| IXTQ200N075T | IXYS | Power MOSFET |