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KSC5026M Datasheet Preview

KSC5026M Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
·High breakdown voltage
·Small reverse transfer capacitance and excellent high
frequency characteristic
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For high definition CRT display ,video output
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1100
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Tc=25
TJ
Junction Temperature
1.5
A
20
W
150
Tstg
Storage Temperature Range
-55~150
KSC5026M
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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KSC5026M Datasheet Preview

KSC5026M Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base breakdown voltage
IC=1mA ; IB=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC=750mA; IB= 150mA
VBE(sat) Base-Emitter Saturation Voltage
IC=750mA; IB= 150mA
ICBO
Collector Cutoff Current
VCB=800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 100mA ; VCE=5V
hFE-2
DC Current Gain
IC= 500mA ; VCE=5V
fT
Current-Gain—Bandwidth Product
IE= -100mA; VCE= 10V
hFE Classifications
N
R
10-20
15-30
O
20-40
KSC5026M
MIN TYP. MAX UNIT
1100
V
800
V
5
V
2.0
V
1.5
V
10 μA
10 μA
10
40
8
15
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KSC5026M
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

KSC5026M Datasheet PDF





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