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MJ10005P - NPN Transistor

General Description

Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power,fast switching applications.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power,fast switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.Junction Temperature 500 V 400 V 8 V 20 A 30 A 2.