Datasheet Details
| Part number | MJ10005P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.84 KB |
| Description | NPN Transistor |
| Datasheet | MJ10005P-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | MJ10005P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.84 KB |
| Description | NPN Transistor |
| Datasheet | MJ10005P-INCHANGE.pdf |
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·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power,fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.Junction Temperature 500 V 400 V 8 V 20 A 30 A 2.5 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W MJ10005P isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 250mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A ,IB= 400mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ,IB= 2.0A VBE(sat)1 Base-Emitter Saturation Voltage ICER Collector Cutoff Current ICEV Collector Cutoff Current IEBO Emitter Cutoff Current IC= 10A ,IB= 400mA VCB=400V, IE= 0;RBE=50Ω;
Tj=100℃ VCE= 450V, IB=0,VBE=1.5V VCE= 450V, IB=0,VBE=1.5V Tj=150℃ VEB= 2V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ10005 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS | Motorola Inc |
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