MJ10005P
DESCRIPTION
- Very high DC current gain
- Monolithic darlington transistor with integrated antiparallel collector-emitter diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High power,fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM IB PC Tj
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.Junction Temperature
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.0 ℃/W
MJ10005P isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)...
