900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

MJ10005P Datasheet Preview

MJ10005P Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High power,fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
Max.Junction Temperature
500
V
400
V
8
V
20
A
30
A
2.5
A
125
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.0 /W
MJ10005P
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

MJ10005P Datasheet Preview

MJ10005P Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 250mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A ,IB= 400mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ,IB= 2.0A
VBE(sat)1 Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 10A ,IB= 400mA
VCB=400V, IE= 0;RBE=50Ω;
Tj=100
VCE= 450V, IB=0,VBE=1.5V
VCE= 450V, IB=0,VBE=1.5V
Tj=150
VEB= 2V; IC= 0
hFE
DC Current Gain
IC= 5A ; VCE= 5V
MJ10005P
MIN
MAX UNIT
400
V
1.9
V
3.0
V
2.5
V
5
mA
0.25
5
mA
175
mA
300
1800
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MJ10005P
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

MJ10005P Datasheet PDF





Similar Datasheet

1 MJ10005 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS
Motorola Inc
2 MJ10005 NPN Transistor
INCHANGE
3 MJ10005 NPN Transistor
DIGITRON
4 MJ10005P NPN Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy