Datasheet4U Logo Datasheet4U.com

MJ413 - NPN Transistor

📥 Download Datasheet

Preview of MJ413 PDF
datasheet Preview Page 2

Datasheet Details

Part number MJ413
Manufacturer INCHANGE
File Size 210.28 KB
Description NPN Transistor
Datasheet download datasheet MJ413-INCHANGE.pdf

MJ413 Product details

Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min.) DC Current Gain- : hFE= 20-80@ IC= 0.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circuits.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER UNIT VALUE VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 5 V IC

📁 MJ413 Similar Datasheet

  • MJ411 - Bipolar NPN Device (Seme LAB)
  • MJ400 - Bipolar NPN Device (Seme LAB)
  • MJ4030 - Power Transistors (Mospec)
  • MJ4031 - (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS (Comset Semiconductors)
  • MJ4032 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJ4033 - Power Transistors (Mospec)
  • MJ4034 - (MJ4033 - MJ4035) SILICON POWER TRANSISTOR (SavantIC)
  • MJ4035 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (ST Microelectronics)
Other Datasheets by INCHANGE
Published: |