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MJD42C1G Datasheet Preview

MJD42C1G Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.5 V(Max)@ IC = -6A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
IB
Base Current
-2
A
Collector Power Dissipation@TC=25
20
PC
W
Collector Power Dissipation@Ta=251.75
Tj
Junction Tmperature
-65~150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 /W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 /W
MJD42C1G
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

MJD42C1G Datasheet Preview

MJD42C1G Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistors
MJD42C1G
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0
-100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=- 6A ;IB= -0.6A
-1.5
V
VBE(on) Base-Emitter On Voltage
IC= -6A ; VCE= 4V
-2
V
ICEO
Collector Cutoff Current
VCE=- 60V; IB=0
-50
µA
ICBO
Collector Cutoff Current
VCB= -100V; IE=0
-20
µA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.5
mA
hFE-1
DC Current Gain
IC= -0.3A ; VCE= -4V
30
hFE-2
DC Current Gain
IC= -3A ; VCE= -4V
15
75
fT
Current-Gain—Bandwidth Product
IC= -0.5A ; VCE= -10V;ftest= 1.0MHz
3
Pulse Test: PW≤300μs, Duty Cycle≤2.0%
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MJD42C1G
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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