MJE1320 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=0.1mA; IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=50mA; RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=0.1mA;IC=0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC=1A;.