Part R6006KNX
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 247.53 KB
Inchange Semiconductor

R6006KNX Overview

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 40 W TJ Max.

Key Features

  • Drain Current –ID=6A@ TC=25℃
  • Drain Source Voltage- : VDSS=600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 830mΩ(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation