SPB80P06P mosfet equivalent, p-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤23mΩ(@VGS= -10V; ID= -64A)
*Advanced trench process technology
*100% avalanche tested
*Minimum Lot-to-Lot vari.
*Fast switching application.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Vo.
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