INCHANGE
SPB80P06P - P-Channel MOSFET
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology
Rating:
1
★
(2 votes)
Infineon
SPB80P06PG - Power Transistor
SPB80P06P G
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
Rating:
1
★
(2 votes)
Infineon Technologies
SPB80P06P - Power Transistor
SPB80P06P G
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
Rating:
1
★
(1 votes)
