SPB80P06P Datasheet | Specifications & PDF Download

SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology

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SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage

(3 views)