STB8NM60 - N-Channel MOSFET

INCHANGE

Datasheet Details

Drain Current.
ID= 8A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 4, 2020 |