STB8NM60T4 Datasheet | STMicroelectronics

tures Order code RDS(on) max. 600 V 1.0 Ω 8A - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications Description G(1) S(3) AM01475v1_no Zen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the pany's Power MESH horizontal layout. This device offers extremely low onresistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance that is superior to similar products on the market. Product status link STB8NM60T4 Product summary Order code Marking B8NM60 Package D²PAK Packing Tape and reel DS14351 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical...