STB8NM60T4 Description
G(1) S(3) AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the pany's PowerMESH horizontal layout. This device offers extremely low onresistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic...
STB8NM60T4 Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance