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STB8NM60T4 - N-channel Power MOSFET

Datasheet Summary

Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.

Features

  • Order code VDS RDS(on) max. ID STB8NM60T4 600 V 1.0 Ω 8A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet Details

Part number STB8NM60T4
Manufacturer STMicroelectronics
File Size 622.96 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB8NM60T4 Datasheet
Additional preview pages of the STB8NM60T4 datasheet.

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Full PDF Text Transcription

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STB8NM60T4 Datasheet N-channel 600 V, 0.9 Ω typ., 8 A MDmesh Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS RDS(on) max. ID STB8NM60T4 600 V 1.0 Ω 8A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description G(1) S(3) AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low onresistance, high dv/dt, and excellent avalanche characteristics.
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