Datasheet Details
| Part number | STB8NM60T4 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 622.96 KB |
| Description | N-channel Power MOSFET |
| Download | STB8NM60T4 Download (PDF) |
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| Part number | STB8NM60T4 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 622.96 KB |
| Description | N-channel Power MOSFET |
| Download | STB8NM60T4 Download (PDF) |
|
|
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G(1) S(3) AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout.
This device offers extremely low onresistance, high dv/dt, and excellent avalanche characteristics.
Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance that is superior to similar products on the market.
STB8NM60T4 Datasheet N-channel 600 V, 0.9 Ω typ., 8 A MDmesh Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2,.
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