STD888 Overview
·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.7V(Max)( IC= -5A; 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=-0.1mA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage VCE(sat) Collector-Emitter Saturation Voltage...
