STP12NM50FP mosfet equivalent, n-channel mosfet.
* Drain-source on-resistance:
RDS(on) ≤ 0.35Ω@10V
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performanc.
*Be suitable for increasing power density of high voltage converters
allowing system miniaturization and higher effi.
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