SUD50P10-43L Datasheet PDF - INCHANGE P-Channel MOSFET Specs

SUD50P10-43L - P-Channel MOSFET

Datasheet Summary

Description

Power Supply - Secondary Synchronous Rectification Power tools Motor drive switch Battery management ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=

Features

TrenchFET® Power MOSFET.
175 °C Junction Temperature.
100 % Rg and UIS Tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Datasheet Details

Part number	SUD50P10-43L
Manufacturer	INCHANGE
File Size	203.95 KB
Description	P-Channel MOSFET
Datasheet	SUD50P10-43L Datasheet
Additional preview pages of the SUD50P10-43L datasheet.

📁 Similar Datasheet

SUD50P10-43L - P-Channel MOSFET (Vishay)

SUD50P10-43L-GE3 - P-Channel 100V MOSFET (Vishay)

SUD50P10-43 - P-Channel MOSFET (Vishay)

SUD50P04-08 - P-Channel MOSFET (Vishay)

SUD50P04-08-GE3 - P-Channel MOSFET (VBsemi)

SUD50P04-09L - P-Channel MOSFET (Vishay Siliconix)

SUD50P04-09L-E3 - P-Channel MOSFET (VBsemi)

SUD50P04-13L - P-Channel MOSFET (Vishay Siliconix)

SUD50P04-15 - P-Channel MOSFET (Vishay Siliconix)

SUD50P04-23 - P-Channel MOSFET (Vishay)

Full PDF Text Transcription

Click to expand full text

Isc P-Channel MOSFET Transistor ·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Power Supply - Secondary Synchronous Rectification ·Power tools ·Motor drive switch ·Battery management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=150℃） TC=125℃ TA=25℃ TA=125℃ Drain Current-Single Pulsed(t=100μs) Total Dissipation @TC=25℃ TC=70℃ TA=25℃ TA=70℃ Max. Operating Junction Temperature ±20 -37.1 -31 -9.2 -7.7 -40 136 95 8.3 5.

Published: Sep 3, 2020 |