SUD50P10-43L Overview
ID=- 0.25mA -100 V VGS(th) Gate Threshold Voltage VDS= ±20V; ID=-0.25mA -1 -3 V RDS(on) Drain-Source On-Resistance VGS= -10V; ID=-7.7A 36 40 43 48 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±0.1 μA IDSS Drain-Source Leakage Current VDS= -100V;.
SUD50P10-43L Key Features
- TrenchFET® Power MOSFET -175 °C Junction Temperature -100 % Rg and UIS Tested -Minimum Lot-to-Lot variations for robust
- DESCRIPTION -Power Supply
- Secondary Synchronous Rectification -Power tools -Motor drive switch -Battery management
