Si2315BDS Datasheet, INCHANGE

Si2315BDS mosfet equivalent, p-channel mosfet.

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Features and benefits

*Static drain-source on-resistance: RDS(on) ≤52mΩ@VGS= -4.5V; ID= -3.8A
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to.

Application

*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Dra.

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SI2310

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