High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
Complement to Type TIP147T
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpose amplifier an
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Complement to Type TIP147T ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
0.
TIP142T Datasheet
