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TIP31 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max.)@IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Complement to Type TIP32 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO IC ICM IB PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range 5 V 3 A 5 A 1 A 40 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;

Overview

isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31.