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TIP31 NPN Transistor

TIP31 Description

isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31 .
Collector-Emitter Saturation Voltage- : VCE(sat) = 1. Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min). Complem.

TIP31 Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO IC ICM IB PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Co

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Datasheet Details

Part number
TIP31
Manufacturer
INCHANGE
File Size
206.73 KB
Datasheet
TIP31-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE TIP31-like datasheet