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TIPL760C Datasheet Preview

TIPL760C Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
FEATURES
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 550V(Min.)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Rugged Triple-duffused planar construction
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Peak collector current
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1200
V
550
V
10
V
4
A
8
A
75
W
150
-65~150
TIPL760C
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

TIPL760C Datasheet Preview

TIPL760C Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
TIPL760C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
ICBO
ICE O
Collector-Emitter Breakdown Voltage
Base Cutoff current
Collector Cutoff current
IC= 10mA
VCB= 1200V, IE = 0
VCB= 1200V, IE = 0 TC = 100°C
VCE= 550V, IE= 0
IEBO
Emitter Cutoff current
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
VEB= 10V, IC= 0
IC= 2A, IB= 0.4A
IC= 3A, IB= 0.6A
IC= 2A, IB= 0.4A
IC= 3A, IB= 0.6A
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
MIN
TYP.
MAX
UNI
T
550
V
50
µA
200
50
µA
1
mA
1.0
2.5
V
1.2
1.4
V
20
60
ft
Current gain bandwidth product
VCE = 10 V IC = 0.5 A f = 1 MHz
12
MHZ
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number TIPL760C
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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TIPL760C Datasheet PDF





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