TIPL760C Overview
Description
Rugged Triple-duffused planar construction SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Peak collector current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 550 V 10 V 4 A 8 A 75 W 150 ℃ -65~150 ℃ TIPL760C isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TIPL760C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO ICBO ICE O Collector-Emitter Breakdown Voltage Base Cutoff current Collector Cutoff current IC= 10mA VCB= 1200V, IE = 0 VCB= 1200V, IE = 0 TC = 100°C VCE= 550V, IE= 0 IEBO Emitter Cutoff current VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VEB= 10V, IC= 0 IC= 2A, IB= 0.4A IC= 3A, IB= 0.6A IC= 2A, IB= 0.4A IC= 3A, IB= 0.6A hFE DC Current Gain IC= 0.5A; VCE= 5V MIN TYP. MAX UNI T 550 V 50 µA 200 50 µA 1 mA 1.0 2.5 V 1.2 1.4 V 20 60 ft Current gain bandwidth product VCE = 10 V IC = 0.5 A f = 1 MHz 12 MHZ NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
