TIPL760C - NPN Transistor

INCHANGE

TIPL760C Datasheet Preview — Preview of TIPL760C PDF

Datasheet Details

Part number	TIPL760C
Manufacturer	INCHANGE
File Size	208.25 KB
Description	NPN Transistor
Datasheet	TIPL760C-INCHANGE.pdf

TIPL760C Product details

Description

Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Peak collector current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 550 V 10 V 4 A 8 A 75 W 150 ℃ -65~150 ℃ TIPL760C isc website：www.iscsemi.com 1 isc & iscsemi is registered trad

Features

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min. ).
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Sep 9, 2020 |