TIPL760C
FEATURES
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 550V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
- Rugged Triple-duffused planar construction
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Peak collector current
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-65~150 ℃
TIPL760C isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO ICBO ICE O
Collector-Emitter Breakdown Voltage Base Cutoff current Collector Cutoff current
IC= 10m A
VCB= 1200V, IE = 0 VCB= 1200V, IE = 0 TC = 100°C VCE= 550V, IE= 0
IEBO
Emitter...
