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International Rectifier Electronic Components Datasheet

G4PC40W Datasheet

IRG4PC40W

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PD -91656C
IRG4PC40W
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
www.DataSheet4U.com Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.77
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000


International Rectifier Electronic Components Datasheet

G4PC40W Datasheet

IRG4PC40W

No Preview Available !

IRG4PC40W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
www.DataSheet4U.com
Parameter
Min. Typ. Max.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — —
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.44
2.05 2.5
VCE(ON)
Collector-to-Emitter Saturation Voltage
2.36
1.90
VGE(th)
Gate Threshold Voltage
3.0 6.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage 13
gfe Forward Transconductance U
18 28
ICES
Zero Gate Voltage Collector Current
— — 250
— — 2.0
— — 2500
IGES Gate-to-Emitter Leakage Current
— — ±100
Units
V
V
V/°C
V
mV/°C
S
µA
nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 40A
See Fig.2, 5
IC = 20A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100 V, IC =20A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
98 147
IC = 20A
12 18 nC VCC = 400V
36 54
VGE = 15V
27
See Fig.8
22 ns TJ = 25°C
100 150
IC = 20A, VCC = 480V
74 110
VGE = 15V, RG = 10
0.11
Energy losses include "tail"
0.23 mJ See Fig. 9,10, 14
0.34 0.45
25
23
170
124
TJ = 150°C,
ns IC = 20A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
0.85 mJ See Fig.10,11, 14
13 nH Measured 5mm from package
1900
140
35
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
www.irf.com


Part Number G4PC40W
Description IRG4PC40W
Maker IRF
PDF Download

G4PC40W Datasheet PDF






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