IRFU9N20D, IRFR9N20D Datasheet - IRF

IRFU9N20D Power MOSFET

PD - 93919A SMPS MOSFET Applications High frequency DC-DC converters IRFR9N20D IRFU9N20D HEXFET® Power MOSFET l VDSS 200V RDS(on) max 0.38Ω ID 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR9N20D I-Pak IRFU9N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt.

IRFU9N20D Features

* ckage Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4

IRFR9N20D_IRF.pdf