IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Details

Part number	IRG4BC20F
Manufacturer	IRF
File Size	161.56 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC20F_IRF.pdf

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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Published: Aug 23, 2005 |