• Part: IRG4BC20F
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 161.56 KB
Download IRG4BC20F Datasheet PDF
IRF
IRG4BC20F
Features - Fast: Optimized for medium operating frequencies ( 1-5 k Hz in hard switching, >20 k Hz in resonant mode). - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - Industry standard TO-220AB package Fast Speed IGBT VCES = 600V VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits - Generation 4 IGBTs offer highest efficiency available - IGBTs optimized for specified application conditions - Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and...