• Part: IRG4BC20W
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 130.26 KB
Download IRG4BC20W Datasheet PDF
IRF
IRG4BC20W
Features - Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications - Industry-benchmark switching losses improve efficiency of all power supply topologies - 50% reduction of Eoff parameter - Low IGBT conduction losses - Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.5A n-channel Benefits - Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 k Hz ("hard switched" mode) - Of particular benefit to single-ended converters and boost PFC topologies 150W and higher - Low conduction losses and minimal minority-carrier rebination make these an excellent option for resonant mode switching as well (up to >>300 k Hz) TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage...